Structural and photoluminescence properties of porous GaP formed by electrochemical etching

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structural and optical properties of n- type porous silicon– effect of etching time

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2005

ISSN: 0021-8979,1089-7550

DOI: 10.1063/1.2076445